r07ds0992ej0100 rev.1.00 page 1 of 7 dec 20, 2012 preliminary datasheet cr05bm-12a 600v - 0.5a - thyristor low power use features ? i t (av) : 0.5 a ? v drm : 600 v ? i gt : 100 ? a ? planar type outline 1 3 2 renesas package code: prss0003ea-a (package name: to-92*) 1. anode 2. gate 3. cathode 3 1 2 applications igniter, solid state relay, strobe flasher, circuit breaker, and other general purpose control application maximum ratings voltage class parameter symbol 12 unit repetitive peak reverse voltage v rrm 600 v non-repetitive peak reverse voltage v rsm 720 v dc reverse voltage v r(dc) 480 v repetitive peak off-state voltage note1 v drm 600 v dc off-state voltage note1 v d(dc) 480 v notes: 1. with gate to cathode resistance r gk = 1 k ? . parameter symbol ratings unit conditions rms on-state current i t (rms) 0.63 a average on-state current i t (av) 0.4 a commercial frequency, sine half wave 180 ? conduction, ta = 54 ?c 0.5 a commercial frequency, sine half wave 180 ? conduction, ta = 30 ?c surge on-state current i tsm 8 a 50 hz sine half wave 1 full cycle, peak value, non-repetitive i 2 t for fusion i 2 t 0.32 a 2 s value corresponding to 1 cycle of half wave 50 hz, surge on-state current peak gate power dissipation p gm 0.5 w average gate power dissipation p g (av) 0.1 w peak gate forward voltage v fgm 6 v peak gate reverse voltage v rgm 6 v peak gate current i fgm 0.3 a junction temperature tj ?40 to +125 ?c storage temperature tstg ?40 to +125 ?c mass ? 0.23 g typical value r07ds0992ej0100 rev.1.00 dec 20, 2012
cr05bm-12a preliminary r07ds0992ej0100 rev.1.00 page 2 of 7 dec 20, 2012 electrical characteristics parameter symbol min. typ. max. unit test conditions repetitive peak reverse current i rrm ? ? 0.5 ma tj = 125 ?c, v rrm applied repetitive peak off-state current i drm ? ? 0.5 ma tj = 125 ?c, v drm applied, r gk = 1 k ? on-state voltage v tm ? ? 1.2 v tc = 25 ?c, i tm = 1.2 a, instantaneous value gate trigger voltage v gt ? ? 0.8 v tj = 25 ?c, v d = 6 v, i t = 0.1 a note3 gate non-trigger voltage v gd 0.2 ? ? v tj = 125 ?c, v d = 1/2 v drm r gk = 1 k ? gate trigger current i gt 1 note2 ? 100 note2 ? a tj = 25 ?c, v d = 6 v, i t = 0.1 a note3 holding current i h ? ? 5 ma tj = 25 ?c, v d = 12 v, r gk = 1 k ? thermal resistance r th (j-a) ? ? 150 ? c/w junction to ambient notes: 2. if special values of i gt are required, choose item d or e from t hose listed in the tabl e below if possible. item d e i gt ( ? a) 1 to 50 20 to 100 the above values do not include the current flowing through the 1 k ? resistance between the gate and cathode. notes: 3. i gt , v gt measurement circuit. 3v dc i gs i gt 6v dc 60 gt 21 tut 1k r gk a3 a2 v1 a1 switch switch 1 : i gt measurement switch 2 : v gt measurement (inner resistance of voltage meter is about 1k )
cr05bm-12a preliminary r07ds0992ej0100 rev.1.00 page 3 of 7 dec 20, 2012 performance curves 4 2 6 8 10 0 5 01234 10 2 10 1 10 0 10 0 10 1 10 2 10 ?1 10 2 10 1 10 0 10 ?2 10 ?2 10 ?1 10 0 10 ?2 10 ?3 10 ?1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 10 ?1 ta = 25c maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycle s at 60hz) i gt = 100a (tj = 25c) v gd = 0.2v maximum t ransient thermal impedance characteristics (junction to am bient) transient thermal impedance (c/w) time (s) gate trigger voltage vs. junction tempe rature gate trigger voltage (v) junction tempe rature (c) gate voltage (v) gate current (ma) gate characteristics v fgm = 6v p gm = 0.5w v gt = 0.8v (tj = 25c) p g(av) = 0.1w i fgm = 0.3v 10 3 10 2 10 1 10 0 10 3 10 2 10 1 10 0 gate trigger current vs. junction tempe rature junction tempe rature (c) 100 (%) gate trigger current (tj = tc) gate trigger current (tj = 25c) 160 04080120 ?40 typical example 1.0 0.8 0.6 0.4 0 120 ?40 ?20 20 80 0.2 60 040 100 distribution typical example
cr05bm-12a preliminary r07ds0992ej0100 rev.1.00 page 4 of 7 dec 20, 2012 30 60 120 90 180 30 60 120 90 180 allowable ambient temperature vs. average on-state current (single-phase half wave) allowable ambient temperature vs. average on-state current (single-phase full wave) allowable ambient temperature vs. average on-state current (rectangular wave) 160 120 60 40 20 140 100 80 0 30 120 180 dc 270 60 90 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 0 0.8 0 0.20 .4 0.6 0.7 0.10 .30 .5 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 0 0.8 0 0.20 .4 0.6 0.7 0.10 .30 .5 0.8 0 0.20 .4 0.6 0.7 0.10 .30 .5 0.8 0 0.20 .4 0.6 0.7 0.10 .30 .5 30 60 120 90 180 270 dc 160 120 60 40 20 140 100 80 0 0.8 0.6 0.3 0.2 0.1 0.7 0.5 0.4 0 0.8 0 0.20 .4 0.6 0.7 0.10 .30 .5 0.8 0 0.20 .4 0.6 0.7 0.10 .30 .5 160 120 60 40 20 140 100 80 0 30 60 120 90 180 maximum average power dissipation (single-phase half wave) average power dissipation (w) average on-state current (a) ambient temperature (c) ambient temperature (c) ambient temperature (c) average on-state current (a) 360 resistive, inductive loads 360 resistive, inductive loads natural convection 360 resistive loads maximum average power dissipation (single-phase full wave) average power dissipation (w) average on-state current (a) average on-state current (a) maximum average power dissipation (rectangular wave) average power dissipation (w) average on-state current (a) average on-state current (a) 360 resistive, inductive loads 360 resistive loads natural convection 360 resistive, inductive loads natural convection 30 60 120 90 180
cr05bm-12a preliminary r07ds0992ej0100 rev.1.00 page 5 of 7 dec 20, 2012 160 120 60 40 20 140 100 80 0 160 ?40 0 40 80 120 160 ?40 04080 120 typical example breakover voltage vs. junction tempe rature junction temperature (c) r gk = 1k 100 (%) breakover voltage (tj = tc) breakover voltage (tj = 25c) breakover voltage vs. gate to cathode re sistance gate to cathode re sistance (k) 100 (%) breakover voltage (r gk = rk) breakover voltage (r gk = 1k) 0 80 100 120 40 60 20 typical example tj = 125c 10 ?1 10 0 10 1 10 2 breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/s) 100 (%) breakover voltage (d v/dt = vv/s) breakover voltage (d v/dt = 1v/s) 160 0 80 100 120 140 40 60 20 tj = 125c r gk = 1k typical example 10 0 10 1 10 2 10 3 10 1 10 0 10 ?1 10 ?2 holding current vs. junction temperature holding current (ma) junction temperature (c) r gk = 1k i gt (25c) = 35a typical example distribution 10 ?1 10 0 10 1 10 2 holding current vs. gate to cathode re sistance gate to cathode resistance (k) 100 (%) holding current (r gk = rk) holding current (r gk = 1k) 600 500 0 300 400 100 200 typical example tj = 125c 10 2 10 1 10 0 10 ?1 10 0 10 1 10 2 10 ?1 typical example turn-on time vs. gate current turn-on time (s) gate current (ma) v d = 100 v r l = 47 r gk = 1k ta = 25c
cr05bm-12a preliminary r07ds0992ej0100 rev.1.00 page 6 of 7 dec 20, 2012 40 30 15 10 5 35 25 20 0 160 0 40 80 120 140 20 60 100 distribution turn-off time vs. junction tempe rature turn-off time () junction tempe rature (c) v d = 50v, v r = 50v i t = 2a, r gk = 1k 160 120 100 40 60 20 0 ?40 0 40 80 120 160 80 140 junction temperature (c) 100 (%) repetitiv e peak rev e rse v oltage (tj = tc) repetitiv e peak rev e rse v oltage (tj = 25c) repetitive peak reverse voltage vs. junction tempe rature typical example 10 4 10 3 10 2 10 0 10 1 10 2 10 3 10 1 gate trigger current vs. gate current pulse width 100 (%) gate trigger current (tw) gate trigger current (dc) gate current pulse width () typical example v d = 6v r l = 60 ta = 25c
cr05bm-12a preliminary r07ds0992ej0100 rev.1.00 page 7 of 7 dec 20, 2012 package dimensions sc-43a 0.23g mass[typ.] t920 prss0003ea-a renesas code jeita package code previous code unit: mm 5.0max 4.4 3.6 11.5min5 .0max 1.25 circumscribed circle 0.7 1.25 1.1 package name to-92* ordering information orderable part number (example) packing quantity remark cr05bm-12a#b00 bag 500 pcs. straight type cr05bm-12a-d#b00 bag 500 pcs. straight type, i gt item: d cr05bm-12a-a6#b00 bag 500 pcs. a6 lead form cr05bm-12a-da6#b00 bag 500 pcs. a6 lead form, i gt item: d cr05bm-12a-tb#b00 adhesive tape 2000 pcs. a8 lead form cr05bm-12a-dtb#b00 adhesive tape 2000 pcs. a8 lead form, i gt item: d note: please confirm the specificati on about the shipping in detail.
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